Invention Grant
US08218364B2 Operation methods for memory cell and array for reducing punch through leakage
有权
用于减少穿孔渗漏的存储单元和阵列的操作方法
- Patent Title: Operation methods for memory cell and array for reducing punch through leakage
- Patent Title (中): 用于减少穿孔渗漏的存储单元和阵列的操作方法
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Application No.: US13159413Application Date: 2011-06-13
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Publication No.: US08218364B2Publication Date: 2012-07-10
- Inventor: Lit-Ho Chong , Wen-Jer Tsai , Tien-Fan Ou , Jyun-Siang Huang
- Applicant: Lit-Ho Chong , Wen-Jer Tsai , Tien-Fan Ou , Jyun-Siang Huang
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
An integrated circuit includes a memory array having a plurality of memory cells arranged in rows and columns, each memory cell including two doped regions and a channel region therebetween, each pair of adjacent memory cells sharing a common doped region, each memory cell having a charge storage member over the channel region and a control gate over the charge storage member. A first word line is coupled to the memory cells in the same row, each of the memory cells designated as the Nth memory cell. Each of a plurality of bit lines is designated as the Nth bit line, the Nth bit line coupled to a doped region shared by the Nth memory cell and the (N−1)th memory cell. The integrated circuit also has a plurality of global bit lines, each of which coupled to two of the bit lines via a switch.
Public/Granted literature
- US20120002484A1 OPERATION METHODS FOR MEMORY CELL AND ARRAY FOR REDUCING PUNCH THROUGH LEAKAGE Public/Granted day:2012-01-05
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