Invention Grant
US08218366B2 Programming non-volatile storage including reducing impact from other memory cells
有权
编程非易失性存储,包括减少其他存储单元的影响
- Patent Title: Programming non-volatile storage including reducing impact from other memory cells
- Patent Title (中): 编程非易失性存储,包括减少其他存储单元的影响
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Application No.: US12762342Application Date: 2010-04-18
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Publication No.: US08218366B2Publication Date: 2012-07-10
- Inventor: Yingda Dong , Shih-Chung Lee , Ken Oowada
- Applicant: Yingda Dong , Shih-Chung Lee , Ken Oowada
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A system for programming non-volatile storage is proposed that reduces the impact of interference from the boosting of neighbors. Memory cells are divided into two or more groups. In one example, the memory cells are divided into odd and even memory cells; however, other groupings can also be used. Prior to a first trigger, a first group of memory cells are programmed together with a second group of memory cells using a programming signal that increases over time. Subsequent to the first trigger and prior to a second trigger, the first group of memory cells are programmed separately from the second group of memory cells using a programming signal that has been lowered in magnitude in response to the first trigger. Subsequent to the second trigger, the first group of memory cells are programmed together with the second group of memory cells with the programming signal being raised in response to the second trigger. Before and after both triggers, the first group of memory cells are verified together with the second group of memory cells.
Public/Granted literature
- US20110255345A1 PROGRAMMING NON-VOLATILE STORAGE INCLUDNG REDUCING IMPACT FROM OTHER MEMORY CELLS Public/Granted day:2011-10-20
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