Invention Grant
- Patent Title: Low duty mode for femtocell base stations
- Patent Title (中): 毫微微小区基站的低负载模式
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Application No.: US12646337Application Date: 2009-12-23
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Publication No.: US08219086B2Publication Date: 2012-07-10
- Inventor: Muthaiah Venkatachalam , Xiangying Yang
- Applicant: Muthaiah Venkatachalam , Xiangying Yang
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H04W4/00
- IPC: H04W4/00
Abstract:
A low duty mode is provided for a femtocell base station operating as part of a cellular communications system. Methods and systems are described for reducing the service impact of the low-duty mode on mobile stations that are either already attached or are attempting to attach to a femtocell base station.
Public/Granted literature
- US20110003591A1 LOW DUTY MODE FOR FEMTOCELL BASE STATIONS Public/Granted day:2011-01-06
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