Invention Grant
US08219340B2 Monitoring method for through-silicon vias of three-dimensional intergrated circuit (3D IC) and apparatus using the same
有权
三维集成电路（3D IC）的硅通孔监视方法及使用该通孔的设备
- Patent Title: Monitoring method for through-silicon vias of three-dimensional intergrated circuit (3D IC) and apparatus using the same
- Patent Title (中): 三维集成电路（3D IC）的硅通孔监视方法及使用该通孔的设备
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Application No.: US12435311Application Date: 2009-05-04
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Publication No.: US08219340B2Publication Date: 2012-07-10
- Inventor: Keng-Li Su , Chih Sheng Lin , Chih-Wen Hsiao
- Applicant: Keng-Li Su , Chih Sheng Lin , Chih-Wen Hsiao
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW97149117A 20081217
- Main IPC: G01R13/00
- IPC: G01R13/00 ; G01R29/26
Abstract:
A monitoring method for Through-Silicon Vias (TSVs) of a three-dimensional integrated circuit (3D IC) is provided, wherein the 3D IC includes a plurality of TSVs, and the method includes: providing a plurality of inverters; connecting the inverters with the TSVs as a circuit; enabling the circuit to oscillate; measuring an output signal on an output end of one of the inverters; and determining the characteristic of TSVs of the 3D IC based on the output signal.
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