Invention Grant
US08219862B2 Pass/fail scan memory with AND, OR and trinary gates 有权
通过/失败扫描存储器与AND,OR和三门

  • Patent Title: Pass/fail scan memory with AND, OR and trinary gates
  • Patent Title (中): 通过/失败扫描存储器与AND,OR和三门
  • Application No.: US13198336
    Application Date: 2011-08-04
  • Publication No.: US08219862B2
    Publication Date: 2012-07-10
  • Inventor: Lee D. Whetsel
  • Applicant: Lee D. Whetsel
  • Applicant Address: US TX Dallas
  • Assignee: Texas Instruments Incorporated
  • Current Assignee: Texas Instruments Incorporated
  • Current Assignee Address: US TX Dallas
  • Agent Lawrence J. Bassuk; W. James Brady; Frederick J. Telecky, Jr.
  • Main IPC: G01R31/28
  • IPC: G01R31/28
Pass/fail scan memory with AND, OR and trinary gates
Abstract:
A test controller applies test stimulus signals to the input pads of plural die on a wafer in parallel. The test controller also applies encoded test response signals to the output pads of the plural die in parallel. The encoded test response signals are decoded on the die and compared to core test response signals produced from applying the test stimulus signals to core circuits on the die. The comparison produces pass/fail signals that are loaded in to scan cells of an IEEE 1149.1 scan path. The pass/fail signals then may be scanned out of the die to determine the results of the test.
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