Invention Grant
US08220330B2 Vertically integrated MEMS sensor device with multi-stimulus sensing
有权
具有多刺激感测的垂直集成MEMS传感器设备
- Patent Title: Vertically integrated MEMS sensor device with multi-stimulus sensing
- Patent Title (中): 具有多刺激感测的垂直集成MEMS传感器设备
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Application No.: US12609332Application Date: 2009-10-30
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Publication No.: US08220330B2Publication Date: 2012-07-17
- Inventor: Todd F. Miller , Yizhen Lin , David J. Monk , Woo Tae Park
- Applicant: Todd F. Miller , Yizhen Lin , David J. Monk , Woo Tae Park
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Meschkow & Gresham, P.L.C.
- Main IPC: G01P15/125
- IPC: G01P15/125 ; G01P3/04 ; G01P1/02
Abstract:
A microelectromechanical systems (MEMS) sensor device (184) includes a sensor portion (180) and a sensor portion (182) that are coupled together to form a vertically integrated configuration having a hermetically sealed chamber (270). The sensor portions (180, 182) can be formed utilizing different micromachining techniques, and are subsequently coupled utilizing a wafer bonding technique to form the sensor device (184). The sensor portion (180) includes one or more sensors (186, 188), and the sensor portion (182) includes one or more sensors (236, 238). The sensors (186, 188) are located inside the chamber (270) facing the sensors (236, 238) also located inside the chamber (270). The sensors (186, 188, 236, 238) are configured to sense different physical stimuli, such as motion, pressure, and magnetic field.
Public/Granted literature
- US20100242603A1 VERTICALLY INTEGRATED MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING Public/Granted day:2010-09-30
Information query
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