Invention Grant
- Patent Title: Closed loop control of pad profile based on metrology feedback
- Patent Title (中): 基于计量反馈的焊盘轮廓闭环控制
-
Application No.: US12187675Application Date: 2008-08-07
-
Publication No.: US08221193B2Publication Date: 2012-07-17
- Inventor: Shou-Sung Chang , Hung Chih Chen , Stan D Tsai , Yuchun Wang
- Applicant: Shou-Sung Chang , Hung Chih Chen , Stan D Tsai , Yuchun Wang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Dergosits & Noah LLP
- Main IPC: B24B49/12
- IPC: B24B49/12 ; B24B49/18
Abstract:
A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.
Public/Granted literature
- US20100035518A1 CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK Public/Granted day:2010-02-11
Information query
