Invention Grant
- Patent Title: Gas supply mechanism and substrate processing apparatus
- Patent Title (中): 气体供给机构和基板处理装置
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Application No.: US12127311Application Date: 2008-05-27
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Publication No.: US08221581B2Publication Date: 2012-07-17
- Inventor: Hachishiro Iizuka
- Applicant: Hachishiro Iizuka
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-166863 20070625
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/455 ; C23C16/50 ; H01L21/3065
Abstract:
A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect.
Public/Granted literature
- US20080314523A1 GAS SUPPLY MECHANISM AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2008-12-25
Information query
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