Invention Grant
- Patent Title: Silicon particle, silicon particle superlattice and method for producing the same
- Patent Title (中): 硅颗粒，硅颗粒超晶格及其制造方法
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Application No.: US12823314Application Date: 2010-06-25
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Publication No.: US08221881B2Publication Date: 2012-07-17
- Inventor: Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
- Applicant: Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
- Applicant Address: JP Tokyo
- Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2004-075521 20040317; JP2004-076141 20040317
- Main IPC: B32B5/16
- IPC: B32B5/16 ; B32B19/00
Abstract:
A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400° C., provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.
Public/Granted literature
- US20100261007A1 SILICON PARTICLE, SILICON PARTICLE SUPERLATTICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-10-14
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