Invention Grant
- Patent Title: Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same
- Patent Title (中): 用于电子器件应用的相分离的外延复合盖层及其制造方法
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Application No.: US12947911Application Date: 2010-11-17
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Publication No.: US08221909B2Publication Date: 2012-07-17
- Inventor: Tolga Aytug , Mariappan Parans Paranthaman , Ozgur Polat
- Applicant: Tolga Aytug , Mariappan Parans Paranthaman , Ozgur Polat
- Applicant Address: US TN Oak Ridge
- Assignee: UT-Battelle, LLC
- Current Assignee: UT-Battelle, LLC
- Current Assignee Address: US TN Oak Ridge
- Agency: Novak Druce + Quigg
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00

Abstract:
An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.
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