Invention Grant
US08221939B2 Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes having different dosages
有权
使用具有不同剂量的多次曝光通道的带电粒子束光刻法压制图案的方法和系统
- Patent Title: Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes having different dosages
- Patent Title (中): 使用具有不同剂量的多次曝光通道的带电粒子束光刻法压制图案的方法和系统
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Application No.: US12647452Application Date: 2009-12-26
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Publication No.: US08221939B2Publication Date: 2012-07-17
- Inventor: Harold Robert Zable , Akira Fujimura
- Applicant: Harold Robert Zable , Akira Fujimura
- Applicant Address: US CA San Jose
- Assignee: D2S, Inc.
- Current Assignee: D2S, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Mueller Law Offices, P.C.
- Main IPC: G03F1/20
- IPC: G03F1/20 ; G03F1/36
Abstract:
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.
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