Invention Grant
- Patent Title: Manufacturing method of light-emitting diode
- Patent Title (中): 发光二极管的制造方法
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Application No.: US12763364Application Date: 2010-04-20
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Publication No.: US08222056B2Publication Date: 2012-07-17
- Inventor: Kensuke Kojima
- Applicant: Kensuke Kojima
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JPP2009-116348 20090513
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A manufacturing method of a light-emitting diode, includes the steps of: successively growing a first clad layer, an active layer and a second clad layer on a substrate; and patterning the first clad layer, the active layer and the second clad layer into a specified plane shape, and causing at least a part of an outer peripheral part of the active layer to protrude to an outside from at least one of the first clad layer and the second clad layer.
Public/Granted literature
- US20100289000A1 LIGHT-EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2010-11-18
Information query
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