Invention Grant
- Patent Title: Fabricating amorphous zinc oxide semiconductor layer
- Patent Title (中): 制造无定形氧化锌半导体层
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Application No.: US11498031Application Date: 2006-08-02
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Publication No.: US08222076B2Publication Date: 2012-07-17
- Inventor: Yiliang Wu , Yuning Li , Beng S. Ong
- Applicant: Yiliang Wu , Yuning Li , Beng S. Ong
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: H01L21/16
- IPC: H01L21/16
Abstract:
A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.
Public/Granted literature
- US20080032444A1 Fabricating amorphous zinc oxide semiconductor layer Public/Granted day:2008-02-07
Information query
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