Invention Grant
US08222108B2 Method of making a trench MOSFET having improved avalanche capability using three masks process
有权
使用三个掩模工艺制造具有改善的雪崩能力的沟槽MOSFET的方法
- Patent Title: Method of making a trench MOSFET having improved avalanche capability using three masks process
- Patent Title (中): 使用三个掩模工艺制造具有改善的雪崩能力的沟槽MOSFET的方法
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Application No.: US12458298Application Date: 2009-07-08
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Publication No.: US08222108B2Publication Date: 2012-07-17
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW Kaohsiung
- Assignee: Force MOS Technology Co., Ltd.
- Current Assignee: Force MOS Technology Co., Ltd.
- Current Assignee Address: TW Kaohsiung
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming trench MOSFET structure having improved avalanche capability is disclosed. In a preferred embodiment according to the present invention, only three masks are needed in the fabricating process, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer for saving source mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Guassian-distribution from trenched source -body contact to channel region.
Public/Granted literature
- US20110008939A1 Method of making a trench MOSFET having improved avalanche capability using three masks process Public/Granted day:2011-01-13
Information query
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