Invention Grant
- Patent Title: Apparatus and method of temperature control during cleaving processes of thick materials
- Patent Title (中): 厚料切割过程中温度控制的装置和方法
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Application No.: US13246717Application Date: 2011-09-27
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Publication No.: US08222119B2Publication Date: 2012-07-17
- Inventor: Francois J. Henley
- Applicant: Francois J. Henley
- Applicant Address: US CA San Jose
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend and Stockton LLP
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/425 ; H01L21/306 ; C23F1/00
Abstract:
A method for temperature control during a process of cleaving a plurality of free-standing thick films from a bulk material includes clamping a bulk material using a mechanical clamp device adapted to engage the bottom region of the bulk material through a seal with a planar surface of a stage to form a cavity with a height between the bottom region and the planar surface. The planar surface includes a plurality of gas passageways allowing a gas filled in the cavity with adjustable pressure. The method also includes maintaining the temperature of the surface region by processing at least input data and executing a control scheme utilizing at least one or more of: particle bombardment to heat the surface region; radiation to heat the surface region; and gas-assisted conduction between the bottom region and the stage.
Public/Granted literature
- US20120077289A1 APPARATUS AND METHOD OF TEMPERATURE CONTROL DURING CLEAVING PROCESSES OF THICK MATERIALS Public/Granted day:2012-03-29
Information query
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