Invention Grant
- Patent Title: Pitch division patterning techniques
- Patent Title (中): 间距图案化技术
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Application No.: US12646510Application Date: 2009-12-23
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Publication No.: US08222140B2Publication Date: 2012-07-17
- Inventor: Sanh D. Tang , Scott Sills , Haitao Liu
- Applicant: Sanh D. Tang , Scott Sills , Haitao Liu
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Embodiments of the invention comprise pitch division techniques to extend the capabilities of lithographic techniques beyond their minimum pitch. The pitch division techniques described herein employ additional processing to ensure pitch divided lines have the spatial isolation necessary to prevent shorting problems. The pitch division techniques described herein further employ processing acts to increase the structural robustness of high aspect ratio features.
Public/Granted literature
- US20110151668A1 PITCH DIVISION PATTERNING TECHNIQUES Public/Granted day:2011-06-23
Information query
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