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US08222147B2 Semiconductor device with stop layers and fabrication method using ceria slurry 有权
具有停止层的半导体器件和使用二氧化铈浆料的制造方法

  • Patent Title: Semiconductor device with stop layers and fabrication method using ceria slurry
  • Patent Title (中): 具有停止层的半导体器件和使用二氧化铈浆料的制造方法
  • Application No.: US11480207
    Application Date: 2006-06-29
  • Publication No.: US08222147B2
    Publication Date: 2012-07-17
  • Inventor: Takayuki Enda , Masayuki Moriya
  • Applicant: Takayuki Enda , Masayuki Moriya
  • Applicant Address: US CA Sunnyvale
  • Assignee: Spansion LLC
  • Current Assignee: Spansion LLC
  • Current Assignee Address: US CA Sunnyvale
  • Main IPC: H01L21/311
  • IPC: H01L21/311
Semiconductor device with stop layers and fabrication method using ceria slurry
Abstract:
The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.
Abstract(Chinese):

本发明提供一种制造半导体器件的方法，包括：形成在半导体衬底上方包含硅氮化物膜的阻挡层（32），在阻挡层之间和之间形成覆盖膜（34），其中顶表面 在止挡层之间的区域之上的覆盖膜高于止挡层的顶表面，并且通过使用二氧化铈浆料将盖膜抛光到止挡层，并且还提供包括设置在半导体上方的金属层（30）的半导体器件 衬底，设置在金属层上的硅氮化物膜（32）以及设置在金属层之间的嵌入层（36），以使顶表面与氮氧化硅膜的顶表面基本上共面。 根据本发明，可以提供一种在其表面上具有优异平坦化膜的半导体器件及其制造方法。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105 ......后处理
H01L21/311 .......绝缘层的刻蚀
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