Invention Grant
US08222150B2 Method of manufacturing semiconductor device, template, and method of creating pattern inspection data
有权
制造半导体器件的方法，模板和创建图案检查数据的方法
- Patent Title: Method of manufacturing semiconductor device, template, and method of creating pattern inspection data
- Patent Title (中): 制造半导体器件的方法，模板和创建图案检查数据的方法
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Application No.: US12683876Application Date: 2010-01-07
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Publication No.: US08222150B2Publication Date: 2012-07-17
- Inventor: Koji Hashimoto
- Applicant: Koji Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-086917 20090331
- Main IPC: H01L21/306
- IPC: H01L21/306
Abstract:
A method of manufacturing a semiconductor device according to an embodiment of the present invention includes mask layer on a processing target, pressing a template having a pattern having closed loop structure against the mask layer via an imprint material to solidify the imprint material, etching the mask layer by using the imprint material to form a mask, removing a part of the pattern having the closed loop of the mask, and etching the processing target by the mask including the pattern, the part of which is removed.
Public/Granted literature
- US20100248482A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, TEMPLATE, AND METHOD OF CREATING PATTERN INSPECTION DATA Public/Granted day:2010-09-30
Information query
IPC分类:
