Invention Grant
- Patent Title: Method and apparatus for processing a substrate using plasma
- Patent Title (中): 使用等离子体处理衬底的方法和装置
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Application No.: US11618563Application Date: 2006-12-29
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Publication No.: US08222156B2Publication Date: 2012-07-17
- Inventor: Rajindra Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
- Applicant: Rajindra Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: IPSG, P.C., Intellectual Property Law
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
Methods and arrangements for controlling the electron loss to the upper electrode, including techniques and apparatus for biasing the upper electrode more negatively to allow charged species to be trapped within the plasma chamber for a longer period of time, thereby increasing the plasma density may be increased. The induced RF signal on the upper electrode is rectified, thus biasing the upper electrode more negatively. The rectified RF signal may also be amplified, thus driving the upper electrode even more negatively, if desired.
Public/Granted literature
- US20080160775A1 METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE USING PLASMA Public/Granted day:2008-07-03
Information query
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