Invention Grant
- Patent Title: Substrate processing apparatus and semiconductor devices manufacturing method
- Patent Title (中): 基板加工装置及半导体装置制造方法
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Application No.: US13088907Application Date: 2011-04-18
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Publication No.: US08222161B2Publication Date: 2012-07-17
- Inventor: Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
- Applicant: Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2009-200668 20090831; JP2010-144975 20100625
- Main IPC: H01L21/465
- IPC: H01L21/465

Abstract:
Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
Public/Granted literature
- US20110192347A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICES MANUFACTURING METHOD Public/Granted day:2011-08-11
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