Invention Grant
- Patent Title: Semiconductor memory device, method of manufacturing the same, and method of screening the same
- Patent Title (中): 半导体存储器件及其制造方法及其筛选方法
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Application No.: US12705010Application Date: 2010-02-12
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Publication No.: US08222626B2Publication Date: 2012-07-17
- Inventor: Mitsuru Sato , Masanori Komura , Hiroshi Kanno , Kenichi Murooka
- Applicant: Mitsuru Sato , Masanori Komura , Hiroshi Kanno , Kenichi Murooka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-030109 20090212
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.
Public/Granted literature
- US20100202186A1 SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF SCREENING THE SAME Public/Granted day:2010-08-12
Information query
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