Invention Grant
US08222630B2 Organic memory device having memory active region formed by embossing structure
有权
具有由压花结构形成的存储器有源区的有机存储器件
- Patent Title: Organic memory device having memory active region formed by embossing structure
- Patent Title (中): 具有由压花结构形成的存储器有源区的有机存储器件
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Application No.: US11402376Application Date: 2006-04-12
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Publication No.: US08222630B2Publication Date: 2012-07-17
- Inventor: Won Jae Joo , Kwang Hee Lee , Sang Kyun Lee , Tae Lim Choi
- Applicant: Won Jae Joo , Kwang Hee Lee , Sang Kyun Lee , Tae Lim Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2005-0086931 20050916
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L51/10
Abstract:
An organic memory device having a memory active region formed by an embossing structure. This invention provides an organic memory device including a substrate, a first electrode formed on the substrate, an organic memory layer formed on the first electrode, a second electrode formed on the organic memory layer and an embossing structure provided at the organic memory layer to form a memory active region.
Public/Granted literature
- US20070063193A1 Organic memory device having memory active region formed by embossing structure Public/Granted day:2007-03-22
Information query
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