Invention Grant
US08222643B2 Method of manufacturing thin film transistor, thin film transistor, and display unit
失效
制造薄膜晶体管，薄膜晶体管和显示单元的方法
- Patent Title: Method of manufacturing thin film transistor, thin film transistor, and display unit
- Patent Title (中): 制造薄膜晶体管，薄膜晶体管和显示单元的方法
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Application No.: US12603049Application Date: 2009-10-21
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Publication No.: US08222643B2Publication Date: 2012-07-17
- Inventor: Toshiaki Arai , Yoshio Inagaki
- Applicant: Toshiaki Arai , Yoshio Inagaki
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2006-131056 20060510
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/20
Abstract:
A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
Public/Granted literature
- US20100038646A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT Public/Granted day:2010-02-18
Information query
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