Invention Grant
- Patent Title: Semiconductor light emitting element and method of manufacturing therefor
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US12399520Application Date: 2009-03-06
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Publication No.: US08222658B2Publication Date: 2012-07-17
- Inventor: Tatsuyuki Shinagawa , Hirotatsu Ishii , Akihiko Kasukawa
- Applicant: Tatsuyuki Shinagawa , Hirotatsu Ishii , Akihiko Kasukawa
- Applicant Address: JP Tokyo
- Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-243576 20060908; JP2007-196606 20070727
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S3/13
Abstract:
A semiconductor light emitting element of the present invention comprises: a zinc oxide (ZnO) single crystal substrate 12 with a substrate surface of a plane orientation insusceptible to a piezo electric field; a Lattice-matched layer 13 formed on the substrate surface to be lattice-matched with the ZnO single crystal substrate 12; an active layer 15 of indium gallium nitride (InxGa1-xN, 0
Public/Granted literature
- US20090224240A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREFOR Public/Granted day:2009-09-10
Information query
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