Invention Grant
US08222667B2 Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element 有权
半导体发光元件,使用半导体发光元件的半导体发光元件和灯的制造方法

  • Patent Title: Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element
  • Patent Title (中): 半导体发光元件,使用半导体发光元件的半导体发光元件和灯的制造方法
  • Application No.: US12920949
    Application Date: 2009-03-05
  • Publication No.: US08222667B2
    Publication Date: 2012-07-17
  • Inventor: Tokuyuki NakayamaYoshiyuki Abe
  • Applicant: Tokuyuki NakayamaYoshiyuki Abe
  • Applicant Address: JP Toyko
  • Assignee: Sumitomo Metal Mining Co., Ltd
  • Current Assignee: Sumitomo Metal Mining Co., Ltd
  • Current Assignee Address: JP Toyko
  • Agency: Hartman & Hartman, P.C.
  • Agent Gary M. Hartman; Domenica N. S. Hartmna
  • Priority: JP2008-057056 20080306; JP2008-332316 20081226
  • International Application: PCT/JP2009/054143 WO 20090305
  • International Announcement: WO2009/110539 WO 20090911
  • Main IPC: H01L33/42
  • IPC: H01L33/42
Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element
Abstract:
Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element.The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.
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