Power semiconductor devices

Invention Grant

US08222671B2 Power semiconductor devices 失效

Title translation: 功率半导体器件

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Patent Title: Power semiconductor devices
Patent Title (中): 功率半导体器件
Application No.: US11687349

Application Date: 2007-03-16
Publication No.: US08222671B2

Publication Date: 2012-07-17
Inventor: Patrick Reginald Palmer , Zhihan Wang
Applicant: Patrick Reginald Palmer , Zhihan Wang
Applicant Address: GB Cambridge
Assignee: Cambridge Enterprises Limited
Current Assignee: Cambridge Enterprises Limited
Current Assignee Address: GB Cambridge
Main IPC: H01L29/74
IPC: H01L29/74

Abstract:

This invention generally relates to power semiconductor devices, and in particular to improved thyristor devices and circuits. The techniques we describe are particularly useful for so-called MOS-gated thyristors. We describe a thyristor comprising a plurality of power thyristor devices connected in parallel, each said thyristor device being operable at a device current which the device has an on-resistance with a positive temperature coefficient.

Abstract(Chinese):

本发明一般涉及功率半导体器件，特别涉及改进的晶闸管器件和电路。我们描述的技术对所谓的MOS门控晶闸管特别有用。我们描述了包括并联连接的多个功率晶闸管器件的晶闸管，每个所述晶闸管器件可在器件电流下操作，器件具有正温度系数的导通电阻。

Public/Granted literature

US20070221949A1 Power Semiconductor Devices Public/Granted day:2007-09-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/74	....晶闸管型器件，如具有四区再生作用的