Invention Grant
- Patent Title: Bipolar semiconductor device and manufacturing method
- Patent Title (中): 双极半导体器件及制造方法
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Application No.: US13332426Application Date: 2011-12-21
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Publication No.: US08222681B2Publication Date: 2012-07-17
- Inventor: Hans-Joachim Schulze , Francisco Javier Santos Rodriguez
- Applicant: Hans-Joachim Schulze , Francisco Javier Santos Rodriguez
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/745
- IPC: H01L29/745
Abstract:
A trench IGBT is disclosed. One embodiment includes an embedded structure arranged above a collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor region including additional scattering centers for holes, the embedded structure being arranged below the body contact region such that the embedded structure and the body contact region overlap in a horizontal projection.
Public/Granted literature
- US20120098030A1 BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2012-04-26
Information query
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