Invention Grant
- Patent Title: CMOS RF IC
- Patent Title (中): CMOS射频IC
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Application No.: US12273719Application Date: 2008-11-19
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Publication No.: US08222697B2Publication Date: 2012-07-17
- Inventor: Yu Sin Kim , Chang Seok Lee , Nam Jin Oh , Shinichi Iizuka
- Applicant: Yu Sin Kim , Chang Seok Lee , Nam Jin Oh , Shinichi Iizuka
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Lowe, Hauptman, Ham & Berner, LLP
- Priority: KR10-2008-0100212 20081013
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
Provided is a CMOS RF IC comprises an inductor that is formed in the uppermost two or more metal layers among a plurality of metal layers; and a DC bias circuit that is formed in a metal layer provided at the bottom of the metal layers in which the inductor is formed.
Public/Granted literature
- US20100090752A1 CMOS RF IC Public/Granted day:2010-04-15
Information query
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