Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12457290Application Date: 2009-06-05
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Publication No.: US08222742B2Publication Date: 2012-07-17
- Inventor: Hoo-Sung Cho , Han-Soo Kim , Jae-Hoon Jang
- Applicant: Hoo-Sung Cho , Han-Soo Kim , Jae-Hoon Jang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0057963 20080619
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a lower semiconductor layer with first conductive regions and including at least one dummy first conductive region, an upper semiconductor layer with second conductive regions on the lower semiconductor layer and including at least one dummy second conductive region, a penetration hole in the upper semiconductor layer and penetrating the dummy second conductive region and the upper semiconductor layer under the dummy second conductive region, a lower conductive line on the lower semiconductor layer and electrically connected to the first conductive regions, an upper conductive line on the upper semiconductor layer and electrically connected to the second conductive regions, and a first conductive plug in the penetration hole between the lower conductive line and the upper conductive line, the first conductive plug electrically connecting the lower and upper conductive lines and being spaced apart from sidewalls of the penetration hole.
Public/Granted literature
- US20090315187A1 Semiconductor device Public/Granted day:2009-12-24
Information query
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