Invention Grant
- Patent Title: Stacked-type piezoelectric device and method for manufacturing the same
- Patent Title (中): 堆叠式压电装置及其制造方法
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Application No.: US12704620Application Date: 2010-02-12
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Publication No.: US08222800B2Publication Date: 2012-07-17
- Inventor: Wen-Chih Chen , Tsung-Fu Tsai , Huan-Chun Fu
- Applicant: Wen-Chih Chen , Tsung-Fu Tsai , Huan-Chun Fu
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Thomas|Kayden
- Priority: TW98123514A 20090710
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H02N2/04

Abstract:
A stacked-type piezoelectric device includes a stack of piezoelectric layers, plural conductive layers, a first contact hole, a second contact hole, and plural insulating portions. The piezoelectric layers are disposed between the conductive layers. The first and second contact holes penetrate the piezoelectric layers and the conductive layers, and each of first and second contact holes is filled with a conductive material. Every insulating portion is formed at one conductive layer. Two adjacent insulating portions are respectively formed at the outer rims of the first and second contact holes, to electrically isolate the conductive layer (in which the insulating portion is formed) from the conductive material in the contact hole.
Public/Granted literature
- US20110006645A1 STACKED-TYPE PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-01-13
Information query
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