Invention Grant
US08222821B2 Pulse plasma matching systems and methods including impedance matching compensation
有权
脉冲等离子体匹配系统和方法包括阻抗匹配补偿
- Patent Title: Pulse plasma matching systems and methods including impedance matching compensation
- Patent Title (中): 脉冲等离子体匹配系统和方法包括阻抗匹配补偿
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Application No.: US12145850Application Date: 2008-06-25
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Publication No.: US08222821B2Publication Date: 2012-07-17
- Inventor: Keun-Hee Bai , Yoon-Jae Kim , Yong-Jin Kim
- Applicant: Keun-Hee Bai , Yoon-Jae Kim , Yong-Jin Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2007-0063042 20070626
- Main IPC: H05B31/26
- IPC: H05B31/26

Abstract:
A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.
Public/Granted literature
- US20090000942A1 PULSE PLASMA MATCHING SYSTEMS AND METHODS INCLUDING IMPEDANCE MATCHING COMPENSATION Public/Granted day:2009-01-01
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