Invention Grant
- Patent Title: Architecture and method to determine leakage impedance and leakage voltage node
- Patent Title (中): 确定泄漏阻抗和漏电节点的结构和方法
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Application No.: US12748331Application Date: 2010-03-26
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Publication No.: US08222907B2Publication Date: 2012-07-17
- Inventor: Lawrence C. Streit
- Applicant: Lawrence C. Streit
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Kenyon & Kenyon LLP
- Main IPC: G01R27/00
- IPC: G01R27/00
Abstract:
A circuit, system, machine-readable storage medium and method for detecting the presence of a leakage path in a multi-cell voltage source is described. The system includes a detection circuit, the detection circuit having a first, second and third amplifiers, a first input of the first amplifier connected to a first terminal of the voltage source and the first input of the second amplifier connected to a second terminal of the voltage source, a second input of each of the first and second amplifiers connected to a reference capacitor, and an output of each of the first, second and third amplifiers connected to a respective first, second and third outputs of the detection circuit; and a processor having inputs connected to the first and second outputs of the detection circuit.
Public/Granted literature
- US20100259281A1 ARCHITECTURE AND METHOD TO DETERMINE LEAKAGE IMPEDANCE AND LEAKAGE VOLTAGE NODE Public/Granted day:2010-10-14
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