Invention Grant
- Patent Title: Semiconductor device and bias generation circuit
- Patent Title (中): 半导体器件和偏置生成电路
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Application No.: US12567964Application Date: 2009-09-28
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Publication No.: US08222951B2Publication Date: 2012-07-17
- Inventor: Motoyuki Tanaka
- Applicant: Motoyuki Tanaka
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: H03K3/01
- IPC: H03K3/01
Abstract:
A first power supply voltage input section can input a first power supply voltage, a second power supply voltage input section can input a second power supply voltage, a regulator circuit generates a back bias voltage on the basis of the second power supply voltage, and an output section can output the back bias voltage generated by the regulator circuit as an output voltage. A substrate bias can be generated with low power consumption, and the circuit scale can be reduced.
Public/Granted literature
- US20100013550A1 SEMICONDUCTOR DEVICE AND BIAS GENERATION CIRCUIT Public/Granted day:2010-01-21
Information query
