Invention Grant
US08222954B1 Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device 有权
用于工艺,电压和温度变化的半导体器件的方法和装置

  • Patent Title: Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
  • Patent Title (中): 用于工艺,电压和温度变化的半导体器件的方法和装置
  • Application No.: US12362412
    Application Date: 2009-01-29
  • Publication No.: US08222954B1
    Publication Date: 2012-07-17
  • Inventor: Guo Jun RenQi ZhangKetan Sodha
  • Applicant: Guo Jun RenQi ZhangKetan Sodha
  • Applicant Address: US CA San Jose
  • Assignee: Xilinx, Inc.
  • Current Assignee: Xilinx, Inc.
  • Current Assignee Address: US CA San Jose
  • Agent Michael Wallace; John J. King
  • Main IPC: G05F1/10
  • IPC: G05F1/10 G05F3/02
Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
Abstract:
A method and apparatus to reduce the degradation in performance of semiconductor-based devices due to process, voltage, and temperature (PVT) and/or other causes of variation. Adaptive feedback mechanisms are employed to sense and correct performance degradation, while simultaneously facilitating configurability within integrated circuits (ICs) such as programmable logic devices (PLDs). A voltage-feedback mechanism is employed to detect PVT variation and mirrored current references are adaptively adjusted to track and substantially eliminate the PVT variation. More than one voltage-feedback mechanism may instead be utilized to detect PVT-based variations within a differential device, whereby a first voltage-feedback mechanism is utilized to detect common-mode voltage variation and a second voltage-feedback mechanism produces mirrored reference currents to substantially remove the common-mode voltage variation and facilitate symmetrical operation of the differential device.
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