Invention Grant
- Patent Title: Compensated bandgap
- Patent Title (中): 补偿带隙
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Application No.: US12818887Application Date: 2010-06-18
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Publication No.: US08222955B2Publication Date: 2012-07-17
- Inventor: Philippe Duval , Yann Johner , Fabien Vaucher
- Applicant: Philippe Duval , Yann Johner , Fabien Vaucher
- Applicant Address: US AZ Chandler
- Assignee: Microchip Technology Incorporated
- Current Assignee: Microchip Technology Incorporated
- Current Assignee Address: US AZ Chandler
- Agency: King & Spalding L.L.P.
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
An integrated circuit has an untrimmed bandgap generation circuit; and a bandgap generation circuit coupled to the untrimmed bandgap generation circuit. The bandgap generation circuit has a current source controlled by the untrimmed bandgap generation circuit and coupled in series with a resistor and a first bipolar diode device, one or more of bipolar diode devices, each bipolar diode device coupled in parallel with the first bipolar diode device, wherein a trimmed bandgap reference voltage output of the integrated circuit is a function of the number of bipolar diode devices.
Public/Granted literature
- US20110074495A1 COMPENSATED BANDGAP Public/Granted day:2011-03-31
Information query
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