Invention Grant
- Patent Title: RF power amplifier
- Patent Title (中): 射频功率放大器
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Application No.: US13006989Application Date: 2011-01-14
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Publication No.: US08222960B2Publication Date: 2012-07-17
- Inventor: Youn Suk Kim , Dae Seok Jang , Hyo Kun Bae , Seong Geun Kim , Young Jean Song , Ju Young Park
- Applicant: Youn Suk Kim , Dae Seok Jang , Hyo Kun Bae , Seong Geun Kim , Young Jean Song , Ju Young Park
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Lowe, Hauptman, Ham & Berner, LLP
- Priority: KR10-2010-0090621 20100915
- Main IPC: H02H7/20
- IPC: H02H7/20

Abstract:
An RF power amplifier includes an RF choke coil, a power amplification circuit unit, and an electrostatic discharge (ESD) protection unit. The RF choke coil is connected to a voltage terminal through which an operating voltage is applied. The RF choke coil supplies the operating voltage and interrupts an RF signal. The power amplification circuit unit is supplied with the operating voltage through the RF choke coil. The power amplification circuit unit amplifies an input signal inputted through an input terminal and outputs the amplified input signal through an output terminal. The ESD protection unit is connected between a first connection node and a ground. The ESD protection unit bypasses an ESD voltage from the first connection node to the ground, the first connection node being a node between the voltage terminal and the RF choke coil.
Public/Granted literature
- US20120062324A1 RF POWER AMPLIFIER Public/Granted day:2012-03-15
Information query
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