Invention Grant
- Patent Title: Multilayer dielectric substrate and semiconductor package
- Patent Title (中): 多层电介质基板和半导体封装
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Application No.: US12920125Application Date: 2009-03-05
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Publication No.: US08222976B2Publication Date: 2012-07-17
- Inventor: Kousuke Yasooka
- Applicant: Kousuke Yasooka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-068222 20080317
- International Application: PCT/JP2009/054194 WO 20090305
- International Announcement: WO2009/116403 WO 20090924
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
A multilayer dielectric substrate includes a first cavity-resonance suppressing circuit that suppresses cavity resonance of a first signal wave and a second cavity-resonance suppressing circuit that suppresses cavity resonance of a second signal wave, a frequency thereof being different from that of the first signal wave. These cavity-resonance suppressing circuits respectively include openings formed in a surface-layer ground conductor, an impedance transformer with a length of an odd multiple of about ¼ of in-substrate effective wavelength of a signal wave, a tip-short-circuited dielectric transmission line with a length of an odd multiple of about ¼, of in-substrate effective wavelength of a signal wave, a coupling aperture formed in an inner-layer ground conductor, and a resistor formed in the coupling aperture. The multilayer dielectric substrate that suppresses cavity resonance of signal waves of a plurality of frequencies.
Public/Granted literature
- US20110006862A1 MULTILAYER DIELECTRIC SUBSTRATE AND SEMICONDUCTOR PACKAGE Public/Granted day:2011-01-13
Information query
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