Invention Grant
- Patent Title: INL correction circuitry and method for SAR ADC
- Patent Title (中): INL校正电路和SAR ADC的方法
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Application No.: US12799323Application Date: 2010-04-22
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Publication No.: US08223044B2Publication Date: 2012-07-17
- Inventor: Michael D. Snedeker
- Applicant: Michael D. Snedeker
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H03M1/06
- IPC: H03M1/06

Abstract:
INL error in a SAR ADC (10) is reduced by providing correction capacitors (11B) each having a first terminal connected to a conductor (13) which is also connected to one terminal of the capacitors of a CDAC (11A) and to an input of a comparator (5) of the SAR ADC. Stored INL error information (18A) is utilized to control switches (32) coupled to second terminals of the correction capacitors to selectively couple them to either a ground voltage (GND) or a reference voltage (VREF) in response to the stored INL error information so as to reduce the INL errors.
Public/Granted literature
- US20110260899A1 INL correction circuitry and method for SAR ADC Public/Granted day:2011-10-27
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