Invention Grant
US08223109B2 Gate driving circuit having a low leakage current control mechanism
有权
栅极驱动电路具有低漏电流控制机构
- Patent Title: Gate driving circuit having a low leakage current control mechanism
- Patent Title (中): 栅极驱动电路具有低漏电流控制机构
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Application No.: US12330523Application Date: 2008-12-09
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Publication No.: US08223109B2Publication Date: 2012-07-17
- Inventor: Lee-Hsun Chang , Wen-Pin Chen , Je-Hao Hsu , Chiu-Mei Yu
- Applicant: Lee-Hsun Chang , Wen-Pin Chen , Je-Hao Hsu , Chiu-Mei Yu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: AU Optronics Corp.
- Current Assignee: AU Optronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW97138667A 20081008
- Main IPC: G09G3/36
- IPC: G09G3/36

Abstract:
A gate driving circuit having a low leakage current control mechanism is disclosed for providing a plurality of gate signals forwarded to a plurality of gate lines respectively. The gate driving circuit includes a plurality of shift registers. Each shift register includes a driving unit, an energy store unit, a buffer unit, a voltage regulation unit, and a control unit. The driving unit generates a gate signal based on a driving control voltage and a first clock. The buffer unit functions to receive a start pulse signal. The energy store unit provides the driving control voltage through performing a charging process based on the start pulse signal. The control unit generates a control signal based on the first clock and a second clock having a phase opposite to the first clock. The voltage regulation unit regulates the driving control voltage based on the control signal.
Public/Granted literature
- US20100085083A1 GATE DRIVING CIRCUIT HAVING A LOW LEAKAGE CURRENT CONTROL MECHANISM Public/Granted day:2010-04-08
Information query
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