Invention Grant
US08223312B2 Method of manufacturing a display device using a barrier layer to form an ohmic contact layer 有权
制造使用阻挡层形成欧姆接触层的显示装置的方法

Method of manufacturing a display device using a barrier layer to form an ohmic contact layer
Abstract:
An embodiment of the invention provides a thin film transistor liquid crystal display (TFT-LCD) array substrate comprising: a gate line and a data line that intersect with each other to define a pixel region; and a pixel electrode and a thin film transistor formed in the pixel region. The thin film transistor comprises: a gate electrode connected with the gate line; a semiconductor island positioned above the gate electrode; and a source electrode and a drain electrode that are formed on the semiconductor island. A surface of the semiconductor island contacting with the source electrode and the drain electrode comprises ohmic contact regions subject to a surface treatment and a region of the semiconductor layer between the source electrode and the drain electrode is covered with a barrier layer. Another embodiment of the invention provides a method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate.
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