Invention Grant
- Patent Title: Dual-purpose electrode/mirror design for optoelectronic devices in a focusing assembly
- Patent Title (中): 聚焦组件中光电器件的双用途电极/镜面设计
-
Application No.: US12942063Application Date: 2010-11-09
-
Publication No.: US08223422B2Publication Date: 2012-07-17
- Inventor: Peter G. Goetz , William S. Rabinovich
- Applicant: Peter G. Goetz , William S. Rabinovich
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Amy L. Ressing; Sally A. Ferrett
- Main IPC: G02F1/03
- IPC: G02F1/03 ; G02B26/00

Abstract:
An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
Public/Granted literature
- US20110051217A1 High Performance Chirped Electrode Design for Large Area Optoelectronic Devices Public/Granted day:2011-03-03
Information query