Invention Grant
US08223527B2 Semiconductor device having memory array, method of writing, and systems associated therewith
有权
具有存储器阵列，写入方法和与其相关联的系统的半导体器件
- Patent Title: Semiconductor device having memory array, method of writing, and systems associated therewith
- Patent Title (中): 具有存储器阵列，写入方法和与其相关联的系统的半导体器件
-
Application No.: US12289937Application Date: 2008-11-07
-
Publication No.: US08223527B2Publication Date: 2012-07-17
- Inventor: Kwang Jin Lee , Qi Wang , Beak Hyung Cho
- Applicant: Kwang Jin Lee , Qi Wang , Beak Hyung Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0114465 20071109
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/00
Abstract:
In one embodiment, the semiconductor device, includes a non-volatile memory cell array, and a control unit configured to generate a mode signal indicating if a flash mode has been enabled. A write circuit is configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received.
Public/Granted literature
- US20090141567A1 Semiconductor device having memory array, method of writing, and systems associated therewith Public/Granted day:2009-06-04
Information query
