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US08223530B2 Variable-resistance memory device and its operation method 有权
可变电阻存储器件及其操作方法

  • Patent Title: Variable-resistance memory device and its operation method
  • Patent Title (中): 可变电阻存储器件及其操作方法
  • Application No.: US12760262
    Application Date: 2010-04-14
  • Publication No.: US08223530B2
    Publication Date: 2012-07-17
  • Inventor: Makoto Kitagawa
  • Applicant: Makoto Kitagawa
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2009-103907 20090422
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Variable-resistance memory device and its operation method
Abstract:
A variable-resistance memory device includes: memory cells; first wires; a second wire; a drive/control section; and a sense amplifier.
Abstract(Chinese):

可变电阻存储器件包括：存储器单元; 第一根线 第二根线 驱动/控制部分; 和一个读出放大器。

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