Invention Grant
US08223540B2 Method and apparatus for double-sided biasing of nonvolatile memory
有权
非易失性存储器双面偏置的方法和装置
- Patent Title: Method and apparatus for double-sided biasing of nonvolatile memory
- Patent Title (中): 非易失性存储器双面偏置的方法和装置
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Application No.: US11670677Application Date: 2007-02-02
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Publication No.: US08223540B2Publication Date: 2012-07-17
- Inventor: Chao-I Wu
- Applicant: Chao-I Wu
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/115
Abstract:
Methods and apparatuses are disclosed for biasing the source-side and the drain-side of a nonvolatile memory to add electrons to the charge trapping structure.
Public/Granted literature
- US20080185615A1 Method and Apparatus for Double-Sided Biasing of Nonvolatile Memory Public/Granted day:2008-08-07
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