Invention Grant
- Patent Title: NAND flash memory programming
- Patent Title (中): NAND闪存编程
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Application No.: US12627448Application Date: 2009-11-30
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Publication No.: US08223549B2Publication Date: 2012-07-17
- Inventor: Seiichi Aritome , Haitao Liu , Di Li
- Applicant: Seiichi Aritome , Haitao Liu , Di Li
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P. A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A programming method and memory structure for preventing punch-through in a short channel source-side select gate structure includes adjusting voltages on the selected and unselected bitlines, and the program, pass, and select gate voltages.
Public/Granted literature
- US20100074021A1 NAND FLASH MEMORY PROGRAMMING Public/Granted day:2010-03-25
Information query
