Invention Grant
US08223550B2 Nonvolatile semiconductor memory apparatus comprising charge accumulation layer and control gate
有权
包括电荷累积层和控制栅极的非易失性半导体存储器件
- Patent Title: Nonvolatile semiconductor memory apparatus comprising charge accumulation layer and control gate
- Patent Title (中): 包括电荷累积层和控制栅极的非易失性半导体存储器件
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Application No.: US12760866Application Date: 2010-04-15
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Publication No.: US08223550B2Publication Date: 2012-07-17
- Inventor: Yoshiaki Takeuchi
- Applicant: Yoshiaki Takeuchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-107929 20090427
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C7/00

Abstract:
A nonvolatile semiconductor memory apparatus includes memory cell strings, first and second bit lines, a first buffer, a second buffer, and a controlling unit. The memory cell strings each include memory cells. The first and second bit lines connected to the memory cell strings. The first buffer connects to the first bit line and holds first data. The second buffer connects to the second bit line and holds second data. The controlling unit includes first and second latches and controls timing to output the first and second data according to an internal terminal, a second signal, and a third signal, and transfers a control signal synchronized with the timing of the first and second data to the external terminal. The controlling unit allows the first latch to hold the first and second data, and transfers the first data, and thereafter transfers the second data.
Public/Granted literature
- US20100271882A1 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS COMPRISING CHARGE ACCUMULATION LAYER AND CONTROL GATE Public/Granted day:2010-10-28
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