Invention Grant
- Patent Title: Soft landing for desired program threshold voltage
- Patent Title (中): 软着陆所需的程序阈值电压
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Application No.: US12389048Application Date: 2009-02-19
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Publication No.: US08223551B2Publication Date: 2012-07-17
- Inventor: Vishal Sarin , Frankie F. Roohparvar , Jung-Sheng Hoei , Jonathan Pabustan
- Applicant: Vishal Sarin , Frankie F. Roohparvar , Jung-Sheng Hoei , Jonathan Pabustan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Methods of programming memory cells are disclosed. In at least one embodiment, programming is accomplished by applying a first set of programming pulses to program to an initial threshold voltage, and applying a second set of programming pulses to program to a final threshold voltage.
Public/Granted literature
- US20100208524A1 SOFT LANDING FOR DESIRED PROGRAM THRESHOLD VOLTAGE Public/Granted day:2010-08-19
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