Invention Grant
- Patent Title: Systems and methods for programming a memory device
- Patent Title (中): 用于编程存储器件的系统和方法
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Application No.: US11248504Application Date: 2005-10-12
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Publication No.: US08223553B2Publication Date: 2012-07-17
- Inventor: Chih Chieh Yeh , Wen Jer Tsai , Yi Ying Liao
- Applicant: Chih Chieh Yeh , Wen Jer Tsai , Yi Ying Liao
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A multi-Level Cell (MLC) can be used to store, for example, 4 bits per cell by storing two bits on each of two sides. Each side can store, e.g., four different current level states that can be determined by the number of holes injected into, e.g., nitride layer, during programming. As more holes are injected the current decreases for a given voltage. The current can be low, therefore, it can be advantageous in one embodiment to use a current amplifier. The current amplifier can be a BJT, MOS or other type of device.
Public/Granted literature
- US20070081390A1 Systems and methods for programming a memory device Public/Granted day:2007-04-12
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