Invention Grant
US08223565B2 Resistance change memory with current control and voltage control during a write operation, and write method of the same
有权
电阻变化记忆与写入操作时的电流控制和电压控制，以及写入方式相同
- Patent Title: Resistance change memory with current control and voltage control during a write operation, and write method of the same
- Patent Title (中): 电阻变化记忆与写入操作时的电流控制和电压控制，以及写入方式相同
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Application No.: US12183537Application Date: 2008-07-31
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Publication No.: US08223565B2Publication Date: 2012-07-17
- Inventor: Yoshihiro Ueda
- Applicant: Yoshihiro Ueda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-202320 20070802
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A resistance change memory includes a resistance change element having a high-resistance state and a low-resistance state in accordance with write information, and a write circuit configured to supply a write current that the write current flowing through the resistance change element is held constant before and after the resistance change element is changed from the high-resistance state to the low-resistance state, and apply a write voltage that the write voltage applied to the resistance change element is held constant before and after the resistance change element is changed from the low-resistance state to the high-resistance state.
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