Invention Grant
- Patent Title: Near-field light generating element and method for forming the element
- Patent Title (中): 近场光产生元件及其形成方法
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Application No.: US12328232Application Date: 2008-12-04
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Publication No.: US08223611B2Publication Date: 2012-07-17
- Inventor: Kosuke Tanaka , Seiichi Takayama , Satoshi Tomikawa
- Applicant: Kosuke Tanaka , Seiichi Takayama , Satoshi Tomikawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Frommer Lawrence & Haug LLP
- Main IPC: G11B7/00
- IPC: G11B7/00 ; G11B7/135

Abstract:
Provided is a method for forming a near-field light generating element, which is capable of sufficiently suppressing the unevenness of a waveguide surface and the distortion within the waveguide. The forming method comprises the steps of: forming a first etching stopper layer on a lower waveguide layer; forming a second etching stopper layer; forming, on the second etching stopper layer, a plasmon antenna material layer; performing etching with the second etching stopper layer used as a stopper, to form a first side surface of plasmon antenna; forming a side-surface protecting mask so as to cover the first side surface; and performing etching with the first and second etching stopper layers used as stoppers, to form the second side surface. By providing the first and second etching stopper layer, over-etching can be prevented even when each etching process takes enough etch time, which allows easy management of etching endpoints.
Public/Granted literature
- US20100142079A1 Near-Field Light Generating Element And Method For Forming The Element Public/Granted day:2010-06-10
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